Items where Author is "Mahapatra, Souvik"Group by: Item Type | No Grouping Jump to: Article | Conference or Workshop Item Number of items: 62. ArticleChoudhury, Nilotpal ; Parihar, Narendra ; Goel, Nilesh ; Thirunavukkarasu, A. ; Mahapatra, Souvik (2020) Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs IEEE Journal of the Electron Devices Society, 8 . pp. 1281-1288. ISSN 2168-6734 Mahapatra, Souvik ; Parihar, Narendra (2020) Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence IEEE Transactions on Device and Materials Reliability, 20 (1). pp. 4-23. ISSN 1530-4388 Kumar, Satyam ; Anandkrishnan, R. ; Parihar, Narendra ; Mahapatra, Souvik (2020) A Stochastic Framework for the Time Kinetics of Interface and Bulk Oxide Traps for BTI, SILC, and TDDB in MOSFETs IEEE Transactions on Electron Devices, 67 (11). pp. 4741-4748. ISSN 0018-9383 Tiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, Souvik (2019) A 3-D TCAD Framework for NBTI, Part-II: Impact of Mechanical Strain, Quantum Effects, and FinFET Dimension Scaling IEEE Transactions on Electron Devices, 66 (5). pp. 2093-2099. ISSN 0018-9383 Tiwari, Ravi ; Parihar, Narendra ; Thakor, Karansingh ; Wong, Hiu Yung ; Motzny, Steve ; Choi, Munkang ; Moroz, Victor ; Mahapatra, Souvik (2019) A 3-D TCAD Framework for NBTI—Part I: Implementation Details and FinFET Channel Material Impact IEEE Transactions on Electron Devices, 66 (5). pp. 2086-2092. ISSN 0018-9383 Parihar, Narendra ; Anandkrishnan, R ; Chaudhary, Ankush ; Mahapatra, Souvik (2019) A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs IEEE Transactions on Electron Devices, 66 (8). pp. 3273-3278. ISSN 0018-9383 Goyal, Natasha ; Mahapatra, Souvik ; Lodha, Saurabh (2019) Ultrafast Characterization of Hole Trapping Near Black Phosphorus–SiO2 Interface During NBTI Stress in 2-D BP p-FETs IEEE Transactions on Electron Devices, 66 (11). pp. 4572-4577. ISSN 0018-9383 Parihar, Narendra ; Goel, Nilesh ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2018) BTI analysis tool - Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact and EOL estimation IEEE Transactions on Electron Devices, 65 (2). pp. 392-403. ISSN 0018-9383 Parihar, Narendra ; Sharma, Uma ; Southwick, Richard G. ; Wang, Miaomiao ; Stathis, James H. ; Mahapatra, Souvik (2018) Ultrafast measurements and physical modeling of NBTI stress and recovery in RMG FinFETs under diverse DC–AC experimental conditions IEEE Transactions on Electron Devices, 65 (1). pp. 23-30. ISSN 0018-9383 Mukhopadhyay, Subhadeep ; Parihar, Narendra ; Goel, Nilesh ; Mahapatra, Souvik (2017) A comprehensive DC and AC PBTI modeling framework for HKMG n-MOSFETs IEEE Transactions on Electron Devices, 64 (4). pp. 1474-1481. ISSN 0018-9383 Chaudhary, Ankush ; Fernandez, Beryl ; Parihar, Narendra ; Mahapatra, Souvik (2017) Consistency of the two component composite modeling framework for NBTI in large and small area p-MOSFETs IEEE Transactions on Electron Devices, 64 (1). pp. 256-263. ISSN 0018-9383 Mishra, Subrat ; Wong, Hiu Yung ; Tiwari, Ravi ; Chaudhary, Ankush ; Rao, Rakesh ; Moroz, Victor ; Mahapatra, Souvik (2016) TCAD-based predictive NBTI framework for sub-20-nm node device design considerations IEEE Transactions on Electron Devices, 63 (12). pp. 4624-4631. ISSN 0018-9383 Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2016) A comparative study of NBTI and PBTI using different experimental techniques IEEE Transactions on Electron Devices, 63 (10). pp. 4038-4045. ISSN 0018-9383 Mishra, Subrat ; Mahapatra, Souvik (2016) On the impact of time-zero variability, variable NBTI and stochastic TDDB on SRAM cells IEEE Transactions on Electron Devices, 63 (7). pp. 2764-2770. ISSN 0018-9383 Parihar, Narendra ; Goel, Nilesh ; Chaudhary, Ankush ; Mahapatra, Souvik (2016) A modeling framework for NBTI degradation under dynamic voltage and frequency scaling IEEE Transactions on Electron Devices, 63 (3). pp. 946-953. ISSN 0018-9383 Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2015) An experimental perspective of trap generation under BTI stress IEEE Transactions on Electron Devices, 62 (7). pp. 2092-2097. ISSN 0018-9383 Agrawal, Nidhi ; Thathachary, Arun V. ; Mahapatra, Souvik ; Datta, Suman (2015) Impact of varying indium(x) concentration and quantum confinement on PBTI reliability in InxGa1-xAs FinFET IEEE Electron Device Letters, 36 (2). pp. 120-122. ISSN 0741-3106 Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Nanware, Nirmal ; Mahapatra, Souvik (2014) A detailed study of gate insulator process dependence of NBTI using a compact model IEEE Transactions on Electron Devices, 61 (2). pp. 408-415. ISSN 0018-9383 Goel, Nilesh ; Nanaware, Nirmal ; Mahapatra, Souvik (2013) Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs IEEE Electron Device Letters, 34 (12). pp. 1476-1478. ISSN 0741-3106 Mahapatra, Souvik ; De, Sandip ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Pandey, Rajan K. ; Murali, K. V. R. M. (2013) Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations IEEE Electron Device Letters, 34 (8). pp. 963-965. ISSN 0741-3106 Chaudhary, Ankush ; Mahapatra, Souvik (2013) A physical and SPICE mobility degradation analysis for NBTI IEEE Transactions on Electron Devices, 60 (7). pp. 2096-2103. ISSN 0018-9383 Dongaonkar, Sourabh ; Y., Karthik ; Mahapatra, Souvik ; Alam, Muhammad A. (2011) Physics and statistics of non-ohmic shunt conduction and metastability in amorphous silicon p–i–n solar cells IEEE Journal of Photovoltaics, 1 (2). pp. 111-117. ISSN 2156-3381 Lwin, Zin Zar ; Pey, Kin Leong ; Raghavan, Nagarajan ; Chen, Yining ; Mahapatra, Souvik (2011) New leakage mechanism and dielectric breakdown layer detection in metal-nanocrystal-embedded dual-layer memory gate stack IEEE Electron Device Letters, 32 (6). pp. 800-802. ISSN 0741-3106 Dongaonkar, Sourabh ; Y., Karthik ; Wang, Dapeng ; Frei, Michel ; Mahapatra, Souvik ; Alam, Muhammad A. (2010) On the nature of shunt leakage in amorphous silicon p-i-n solar cells IEEE Electron Device Letters, 31 (11). pp. 1266-1268. ISSN 0741-3106 Singh, Pawan K. ; Bisht, Gaurav ; Auluck, Kshitij ; Sivatheja, M. ; Hofmann, Ralf ; Singh, Kaushal K. ; Mahapatra, Souvik (2010) Performance and reliability study of single-layer and dual-layer platinum nanocrystal flash memory devices under NAND operation IEEE Transactions on Electron Devices, 57 (8). pp. 1829-1837. ISSN 0018-9383 Sandhya, C. ; Oak, Apoorva B. ; Chattar, Nihit ; Ganguly, Udayan ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, Juzer ; Mahapatra, Souvik (2010) Study of P/E cycling endurance induced degradation in SANOS memories under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 57 (7). pp. 1548-1558. ISSN 0018-9383 Sandhya, C. ; Oak, Apoorva B. ; Chattar, Nihit ; Joshi, Ameya S. ; Ganguly, Udayan ; Olsen, C. ; Seutter, S. M. ; Date, L. ; Hung, R. ; Vasi, Juzer ; Mahapatra, Souvik (2009) Impact of SiN composition variation on SANOS memory performance and reliability under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 56 (12). pp. 3123-3132. ISSN 0018-9383 Singh, Pawan K. ; Hofmann, Ralf ; Singh, Kaushal K. ; Krishna, Nety ; Mahapatra, Souvik (2009) Performance and reliability of Au and Pt single-layer metal nanocrystal flash memory under NAND (FN/FN) operation IEEE Transactions on Electron Devices, 56 (9). pp. 2065-2072. ISSN 0018-9383 Datta, Arnab ; Asnani, Rajesh ; Mahapatra, Souvik (2009) A novel gate-assisted reverse-read scheme to control bit coupling and read disturb for multibit/cell operation in deeply scaled split-gate SONOS flash EEPROM cells IEEE Electron Device Letters, 30 (8). pp. 885-887. ISSN 0741-3106 Mahapatra, Souvik ; Maheta, Vrajesh D. ; Islam, Ahmad Ehteshamul ; Alam, Muhammad Ashraful (2009) Isolation of NBTI stress generated interface trap and hole-trapping components in PNO p-MOSFETs IEEE Transactions on Electron Devices, 56 (2). pp. 236-242. ISSN 0018-9383 Deora, Shweta ; Maheta, Vrajesh Dineshchandra ; Bersuker, Gennadi ; Olsen, Christopher ; Ahmed, Khaled Z. ; Jammy, Raj ; Mahapatra, Souvik (2009) A comparative NBTI study of HfO2, HfSiOx and SiON p-MOSFETs using UF-OTF IDLIN technique IEEE Electron Device Letters, 30 (2). pp. 152-154. ISSN 0741-3106 Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Singh, Kaushal ; Krishna, Nety ; Mahapatra, Souvik (2008) Metal nanocrystal memory with pt single- and dual-layer NC with low-leakage Al2O3 blocking dielectric IEEE Electron Device Letters, 29 (12). pp. 1389-1391. ISSN 0741-3106 Maheta, Vrajesh D. ; Naresh Kumar, E. ; Purawat, Shweta ; Olsen, Christopher ; Ahmed, Khaled ; Mahapatra, Souvik (2008) Development of an ultrafast on-the-fly IDLIN technique to study NBTI in plasma and thermal oxynitride p-MOSFETs IEEE Transactions on Electron Devices, 55 (10). pp. 2614-2622. ISSN 0018-9383 Maheta, Vrajesh D. ; Olsen, Christopher ; Ahmed, Khaled ; Mahapatra, Souvik (2008) The impact of nitrogen engineering in silicon oxynitride gate dielectric on Negative-bias Temperature Instability of p-MOSFETs: A study by ultrafast on-the-fly IDLIN technique IEEE Transactions on Electron Devices, 55 (7). pp. 1630-1638. ISSN 0018-9383 Islam, Ahmad Ehteshamul ; Gupta, Gaurav ; Ahmed, Khaled Z. ; Mahapatra, Souvik ; Alam, Muhammad Ashraful (2008) Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models IEEE Transactions on Electron Devices, 55 (5). pp. 1143-1152. ISSN 0018-9383 Mahapatra, Souvik ; Alam, Muhammad Ashraful (2008) Defect generation in p-MOSFETs under Negative-Bias Stress: an experimental perspective IEEE Transactions on Device and Materials Reliability, 8 (1). pp. 35-46. ISSN 1530-4388 Islam, Ahmad Ehteshamul ; Kufluoglu, Haldun ; Varghese, Dhanoop ; Mahapatra, Souvik ; Alam, Muhammad Ashraful (2007) Recent issues in Negative-bias Temperature Instability: initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation IEEE Transactions on Electron Devices, 54 (9). pp. 2143-2154. ISSN 0018-9383 Varghese, Dhanoop ; Gupta, Gaurav ; Lakkimsetti, Leela Madhav ; Saha, Dipankar ; Ahmed, Khaled ; Nouri, Faran ; Mahapatra, Souvik (2007) Physical mechanism and gate insulator material dependence of generation and recovery of Negative-bias Temperature Instability in p-MOSFETs IEEE Transactions on Electron Devices, 54 (7). pp. 1672-1680. ISSN 0018-9383 Bharath Kumar, P. ; Sharma, Ravinder ; Nair, Pradeep R. ; Mahapatra, Souvik (2007) Investigation of drain disturb in SONOS flash EEPROMs IEEE Transactions on Electron Devices, 54 (1). pp. 98-105. ISSN 0018-9383 Mohapatra, Nihar Ranjan ; Mahapatra, Souvik ; Ramgopal Rao, V. (2002) Device scaling effects on substrate enhanced degradation in MOS transistors MRS Proceedings, 716 . pp. B7.2_1-B7.2_6. ISSN 1946-4274 Anil, Kottantharayil ; Mahapatra, Souvik ; Rao, Valipe Ramgopal ; Eisele, Ignaz (2001) Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs Japanese Journal of Applied Physics, 40 . pp. 2621-2626. ISSN 0021-4922 Conference or Workshop ItemMahapatra, Souvik ; Parihar, Narendra ; Mishra, Subrat ; Fernandez, Beryl ; Chaudhary, Ankush (2017) A BTI Analysis Tool (BAT) to simulate p-MOSFET ageing under diverse experimental conditions In: 2017 IEEE Conference on Electron Devices Technology and Manufacturing Conference (EDTM), 28 Feb.-2 March 2017, Toyama, Japan. Parihar, Narendra ; Southwick, Richard G. ; Sharma, Uma ; Wang, Miaomiao ; Stathis, James H ; Mahapatra, Souvik (2017) Comparison of DC and AC NBTI kinetics in RMG Si and SiGe p-FinFETs In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA. Wong, Hiu Yung ; Motzny, Steve ; Moroz, Victor ; Mishra, Subrat ; Mahapatra, Souvik (2017) FinFET NBTI degradation reduction and recovery enhancement through hydrogen incorporation and self-heating In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 7-9 Sept. 2017, Kamakura, Japan. Amrouch, Hussam ; Mishra, Subrat ; van Santen, Victor ; Mahapatra, Souvik ; Henkel, Jorg (2017) Impact of BTI on dynamic and static power: From the physical to circuit level In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA. Mishra, Subrat ; Wong, Hiu Yung ; Tiwari, Ravi ; Chaudhary, Ankush ; Parihar, Narendra ; Rao, Rakesh ; Motzny, Steve ; Moroz, Victor ; Mahapatra, Souvik (2017) Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA. Parihar, Narendra ; Sharma, Uma ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Chaudhary, Ankush ; Rao, Rakesh ; Mahapatra, Souvik (2017) Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA. Joishi, Chandan ; Kothari, Shraddha ; Ghosh, Sayantan ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Lodha, Saurabh (2017) Ultrafast PBTI characterization on Si-free gate last Ge nFETs with stable and ultrathin Al2O3 IL In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA. van Santen, Victor M. ; Amrouch, Hussam ; Parihar, Narendra ; Mahapatra, Souvik ; Henkel, Jorg (2016) Aging-aware voltage scaling In: 2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 14-18 March 2016, Dresden, Germany. Goel, Nilesh ; Naphade, Tejas ; Mahapatra, Souvik (2015) Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA. Agrawal, Nidhi ; Agrawal, Ashish ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik ; Datta, Suman (2015) Electron trapping dominance in strained germanium quantum well planar and FinFET devices with NBTI In: 2015 73rd Annual Device Research Conference (DRC), 21-24 June 2015, Columbus, OH, USA. Yang, Jiaqi ; Masuduzzaman, Muhammad ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Kang, Jinfeng ; Mahapatra, Souvik ; Alam, Muhammad A. (2012) Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS), 15-19 April, 2012, Anaheim, CA, USA. Gupta, Shashank ; Jose, Binoy ; Joshi, Kaustubh ; Jain, Ankit ; Alam, Muhammad Ashraful ; Mahapatra, Souvik (2012) A comprehensive and critical re-assessment of 2-stage energy level NBTI model In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS), 15-19 April, 2012, Anaheim, CA, USA. Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2012) A consistent physical framework for N and P BTI in HKMG MOSFETs In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS). Mahapatra, Souvik ; Goel, Nilesh ; Joshi, Kaustubh (2012) A physics based model for NBTI in p-MOSFETs In: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 29 Oct.-1 Nov. 2012, Xi'an, China. Dongaonkar, Sourabh ; Alam, Muhammad A. ; Karthik, Y. ; Mahapatra, Souvik ; Wang, Dapeng ; Frei, Michel (2011) Identification, characterization and implications of shadow degradation in thin film solar cells In: 2011 IEEE International Reliability Physics Symposium (IRPS), 10-14 April, 2011, Monterey, CA, USA. Dongaonkar, Sourabh ; Karthik, Y. ; Mahapatra, Souvik ; Alam, Muhammad A. (2011) A physical model for non-ohmic shunt conduction and metastability in amorphous silicon p-i-n solar cells In: 2011 37th IEEE Photovoltaic Specialists Conference (PVSC), 19-24 June ,2011, Seattle, WA, USA. Singh, Pawan ; Sandhya, C. ; Auluck, Kshitij ; Bisht, Gaurav ; Sivatheja, M. ; Mukhopadhyay, Gautam ; Mahapatra, Souvik ; Hofmann, Ralf (2010) Applicability of dual layer metal nanocrystal flash memory for NAND 2 or 3-bit/cell operation: Understanding the anomalous breakdown and optimization of P/E conditions In: 2010 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 May, 2010, Anaheim, CA, USA. Singh, Pawan K. ; Bisht, Gaurav ; Hofmann, Ralf ; Singh, Kaushal ; Mahapatra, Souvik (2009) Dual layer Pt metal nanocrystal flash for multi-level-cell NAND applicationn In: 2009 IEEE International Memory Workshop, IMW '09, 10-14 May. 2009, Monterey, CA, USA. Singh, Pawan K ; Bisht, Gaurav ; Sivatheja, M. ; Sandhya, C. ; Mukhopadhyay, Gautam ; Mahapatra, Souvik ; Hofmann, Ralf ; Singh, Kaushal ; Krishna, Nety (2009) Reliability of single and dual Layer Pt nanocrystal devices for NAND flash applications: A 2-region model for endurance defect generation In: 2009 IEEE International Reliability Physics Symposium, 26-30 April, 2009, Montreal, QC, Canada. Singh, Pawan K. ; Singh, Kaushal K. ; Hofmann, Ralf ; Armstrong, Karl ; Krishna, Nety ; Mahapatra, Souvik (2008) Au nanocrystal flash memory reliability and failure analysis In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2008, 7-11 July, 2008, Singapore, Singapore. Deora, Shweta ; Mahapatra, Souvik (2008) A study of NBTI in HfSiON/TiN p-MOSFETs using ultra-fast on-the-fly (UF-OTF) IDLIN technique In: 2008 15th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 7-11 July, 2008, Singapore, Singapore. |

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