Items where Author is "Koteeswara Reddy, N."

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Number of items: 7.

Article

Ramesh, K. ; Prashantha, M. ; Gopal, E. S. R. ; Koteeswara Reddy, N. (2009) Thermal anomalies in ternary Ge42-xPbxSe58 glasses near the charge carrier reversal threshold Journal of Applied Physics, 106 (11). p. 113516. ISSN 0021-8979

Devika, M. ; Koteeswara Reddy, N. ; Sreekantha Reddy, D. ; Venkatramana Reddy, S. ; Ramesh, K. ; Gopal, E. S. R. ; Gunasekhar, K. R. ; Ganesan, V. ; Hahn, Y. B. (2007) Optimization of the distance between source and substrate for device-grade SnS films grown by the thermal evaporation technique Journal of Physics: Condensed Matter, 19 (30). p. 306003. ISSN 0953-8984

Devika, M. ; Koteeswara Reddy, N. ; Ramesh, K. ; Ganesan, V. ; Gopal, E. S. R. ; Ramakrishna Reddy, K. T. (2006) Influence of substrate temperature on surface structure and electrical resistivity of the evaporated tin sulphide films Applied Surface Science, 253 (3). pp. 1673-1676. ISSN 0169-4332

Devika, M. ; Koteeswara Reddy, N. ; Ramesh, K. ; Gunasekhar, K. R. ; Gopal, E. S. R. ; Ramakrishna Reddy, K. T. (2006) Influence of annealing on physical properties of evaporated SnS films Semiconductor Science and Technology, 21 (8). pp. 1125-1131. ISSN 0268-1242

Devika, M. ; Ramakrishna Reddy, K. T. ; Koteeswara Reddy, N. ; Ramesh, K. ; Ganesan, R. ; Gopal, E. S. R. ; Gunasekhar, K. R. (2006) Microstructure dependent physical properties of evaporated tin sulfide films Journal of Applied Physics, 100 (2). pp. 023518 _1-023518 _7. ISSN 0021-8979

Koteeswara Reddy, N. ; Ramesh, K. ; Ganesan, R. ; Ramakrishna Reddy, K. T. ; Gunasekhar, K. R. ; Gopal, E. S. R. (2006) Synthesis and characterisation of co-evaporated tin sulphide thin films Applied Physics A: Materials Science & Processing, 83 (1). pp. 133-138. ISSN 0947-8396

Devika, M. ; Koteeswara Reddy, N. ; Ramesh, K. ; Sumana, H. R. ; Gunasekhar, K. R. ; Gopal, E. S. R. ; Ramakrishna Reddy, K. T. (2006) The effect of substrate surface on the physical properties of SnS films Semiconductor Science and Technology, 21 (10). pp. 1495-1501. ISSN 0268-1242

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