Items where Author is "Kalghatgi, A. T."Group by: Item Type | No Grouping Jump to: Article Number of items: 5. ArticleRoul, Basanta ; Rajpalke, Mohana K. ; Bhat, Thirumaleshwara N. ; Kumar, Mahesh ; Kalghatgi, A. T. ; Krupanidhi, S. B. ; Kumar, Nitesh ; Sundaresan, A. (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films Applied Physics Letters, 99 (16). p. 162512. ISSN 0003-6951 Kumar, Mahesh ; Roul, Basanta ; Bhat, Thirumaleshwara N. ; Rajpalke, Mohana K. ; Sinha, Neeraj ; Kalghatgi, A. T. ; Krupanidhi, S. B. (2010) Droplet epitaxy of InN quantum dots on Si(111) by RF plasma-assisted molecular beam epitaxy Advanced Science Letters, 3 (4). pp. 379-384. ISSN 1936-6612 Kumar, Mahesh ; Roul, Basanta ; Bhat, Thirumaleshwara N. ; Rajpalke, Mohana K. ; Misra, P. ; Kukreja, L. M. ; Sinha, Neeraj ; Kalghatgi, A. T. ; Krupanidhi, S. B. (2010) Improved growth of GaN layers on ultra thin silicon nitride/Si (1 1 1) by RF-MBE Materials Research Bulletin, 45 (11). pp. 1581-1585. ISSN 0025-5408 Kumar, Mahesh ; Bhat, T. N. ; Rajpalke, M. K. ; Roul, B. ; Misra, P. ; Kukreja, L. M. ; Sinha, Neeraj ; Kalghatgi, A. T. ; Krupanidhi, S. B. (2010) Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy Bulletin of Materials Science, 33 (3). pp. 221-226. ISSN 0250-4707 Singh, Jitendra ; Kalghatgi, A. T. ; Parui, Jayanta ; Krupanidhi, S. B. (2010) High-temperature dielectric response in pulsed laser deposited Bi1.5Zn1.0Nb1.5O7 thin films Journal of Applied Physics, 108 (5). pp. 054106_1-054106_6. ISSN 0021-8979 |

Up a level