Items where Author is "Joshi, Kaustubh"

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Number of items: 6.

Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Nanware, Nirmal ; Mahapatra, Souvik (2014) A detailed study of gate insulator process dependence of NBTI using a compact model IEEE Transactions on Electron Devices, 61 (2). pp. 408-415. ISSN 0018-9383

Mahapatra, Souvik ; De, Sandip ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Pandey, Rajan K. ; Murali, K. V. R. M. (2013) Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations IEEE Electron Device Letters, 34 (8). pp. 963-965. ISSN 0741-3106

Yang, Jiaqi ; Masuduzzaman, Muhammad ; Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Kang, Jinfeng ; Mahapatra, Souvik ; Alam, Muhammad A. (2012) Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS), 15-19 April, 2012, Anaheim, CA, USA.

Gupta, Shashank ; Jose, Binoy ; Joshi, Kaustubh ; Jain, Ankit ; Alam, Muhammad Ashraful ; Mahapatra, Souvik (2012) A comprehensive and critical re-assessment of 2-stage energy level NBTI model In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS), 15-19 April, 2012, Anaheim, CA, USA.

Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2012) A consistent physical framework for N and P BTI in HKMG MOSFETs In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS).

Mahapatra, Souvik ; Goel, Nilesh ; Joshi, Kaustubh (2012) A physics based model for NBTI in p-MOSFETs In: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 29 Oct.-1 Nov. 2012, Xi'an, China.

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