Items where Author is "Goel, Nilesh"

Article

Choudhury, Nilotpal ; Parihar, Narendra ; Goel, Nilesh ; Thirunavukkarasu, A. ; Mahapatra, Souvik (2020) Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs IEEE Journal of the Electron Devices Society, 8 . pp. 1281-1288. ISSN 2168-6734

Parihar, Narendra ; Goel, Nilesh ; Mukhopadhyay, Subhadeep ; Mahapatra, Souvik (2018) BTI analysis tool - Modeling of NBTI DC, AC stress and recovery time kinetics, nitrogen impact and EOL estimation IEEE Transactions on Electron Devices, 65 (2). pp. 392-403. ISSN 0018-9383

Mukhopadhyay, Subhadeep ; Parihar, Narendra ; Goel, Nilesh ; Mahapatra, Souvik (2017) A comprehensive DC and AC PBTI modeling framework for HKMG n-MOSFETs IEEE Transactions on Electron Devices, 64 (4). pp. 1474-1481. ISSN 0018-9383

Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2016) A comparative study of NBTI and PBTI using different experimental techniques IEEE Transactions on Electron Devices, 63 (10). pp. 4038-4045. ISSN 0018-9383

Parihar, Narendra ; Goel, Nilesh ; Chaudhary, Ankush ; Mahapatra, Souvik (2016) A modeling framework for NBTI degradation under dynamic voltage and frequency scaling IEEE Transactions on Electron Devices, 63 (3). pp. 946-953. ISSN 0018-9383

Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Nanware, Nirmal ; Mahapatra, Souvik (2014) A detailed study of gate insulator process dependence of NBTI using a compact model IEEE Transactions on Electron Devices, 61 (2). pp. 408-415. ISSN 0018-9383

Goel, Nilesh ; Nanaware, Nirmal ; Mahapatra, Souvik (2013) Ultrafast AC–DC NBTI characterization of deep IL scaled HKMG p-MOSFETs IEEE Electron Device Letters, 34 (12). pp. 1476-1478. ISSN 0741-3106

Conference or Workshop Item

Parihar, Narendra ; Sharma, Uma ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Chaudhary, Ankush ; Rao, Rakesh ; Mahapatra, Souvik (2017) Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs In: 2017 IEEE International Conference on Reliability Physics Symposium (IRPS), 2-6 April 2017, Monterey, CA, USA.

Goel, Nilesh ; Naphade, Tejas ; Mahapatra, Souvik (2015) Combined trap generation and transient trap occupancy model for time evolution of NBTI during DC multi-cycle and AC stress In: 2015 IEEE International Conference on Reliability Physics Symposium (IRPS), 19-23 April 2015, Monterey, CA, USA.

Joshi, Kaustubh ; Mukhopadhyay, Subhadeep ; Goel, Nilesh ; Mahapatra, Souvik (2012) A consistent physical framework for N and P BTI in HKMG MOSFETs In: 2012 IEEE International Conference on Reliability Physics Symposium (IRPS).

Mahapatra, Souvik ; Goel, Nilesh ; Joshi, Kaustubh (2012) A physics based model for NBTI in p-MOSFETs In: 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 29 Oct.-1 Nov. 2012, Xi'an, China.