Items where Author is "Anil, K. G."

Article

Chabukswar, S. ; Maji, D. ; Manoj, C. R. ; Anil, K. G. ; Ramgopal Rao, V. ; Crupi, F. ; Magnone, P. ; Giusi, G. ; Pace, C. ; Collaert, N. (2010) Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs Microelectronic Engineering, 87 (10). pp. 1963-1967. ISSN 0167-9317

Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2002) Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs IEEE Transactions on Electron Devices, 49 (7). pp. 1283-1288. ISSN 0018-9383

Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2001) Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs IEEE Electron Device Letters, 22 (10). pp. 478-480. ISSN 0741-3106

Anil, K. G. ; Mahapatra, S. ; Eisele, I. ; Rao, V. R. ; Vasi, J. (2000) Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime Proceedings of the 30th European Solid-State Device Research Conference (ESSDERC), Ireland . pp. 124-127.

Anil, K. G. ; Mahapatra, S. ; Ramgopal Rao, V. ; Eisele, I. (2000) Comparison of sub-bandgap impact ionization in deep-sub-micron conventional and lateral asymmetrical channel nMOSFETs Proceedings of the International Conference on Solid state Devices and Materials (SSDM) Sendai, Japan . pp. 60-61.

Conference or Workshop Item

Anil, K. G. ; Mahapatra, S. ; Eisele, I. (2000) Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs In: 2000 Technical Digest International Electron Devices Meeting, IEDM '00, 10-13 Dec, 2000, San Francisco, CA, USA.