Items where Author is "Alam, M. A."

Article

Mahapatra, S. ; Goel, N. ; Desai, S. ; Gupta, S. ; Jose, B. ; Mukhopadhyay, S. ; Joshi, K. ; Jain, A. ; Islam, A. E. ; Alam, M. A. (2013) A comparative study of different physics-based NBTI models IEEE Transactions on Electron Devices, 60 (3). pp. 901-916. ISSN 0018-9383

Deora, S. ; Maheta, V. D. ; Islam, A. E. ; Alam, M. A. ; Mahapatra, S. (2009) A common framework of NBTI generation and recovery in Plasma-nitrided SiON p-MOSFETs IEEE Electron Device Letters, 30 (9). pp. 978-980. ISSN 0741-3106

Alam, M. A. ; Kufluoglu, H. ; Varghese, D. ; Mahapatra, S. (2007) A comprehensive model for PMOS NBTI degradation: Recent progress Microelectronics Reliability, 47 (6). pp. 853-862. ISSN 0026-2714

Varghese, D. ; Mahapatra, S. ; Alam, M. A. (2005) Hole energy dependent interface trap generation in MOSFET Si/SiO₂ interface IEEE Electron Device Letters, 26 (8). pp. 572-574. ISSN 0741-3106

Mahapatra, S. ; Alam, M. A. ; Kumar, P. Bharath ; Dalei, T. R. ; Varghese, D. ; Saha, D. (2005) Negative Bias Temperature Instability in CMOS devices Microelectronic Engineering, 80 . pp. 114-121. ISSN 0167-9317

Conference or Workshop Item

Mahapatra, S. ; Islam, A. E. ; Deora, S. ; Maheta, V. D. ; Joshi, K. ; Alam, M. A. (2011) Characterization and modeling of NBTI stress, recovery, material dependence and AC degradation using R-D framework In: 2011 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 4-7 July, 2011, Incheon, South Korea.

Mahapatra, S. ; Islam, A. E. ; Deora, S. ; Maheta, V. D. ; Joshi, K. ; Jain, A. ; Alam, M. A. (2011) A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery In: 2011 IEEE International Conference on Reliability Physics Symposium (IRPS), 10-14 April, 2011, Monterey, CA, USA.

Islam, A. E. ; Mahapatra, S. ; Deora, S. ; Maheta, V. D. ; Alam, M. A. (2009) On the differences between ultra-fast NBTI measurements and Reaction-Diffusion theory In: 2009 IEEE International Conference on Electron Devices Meeting (IEDM), 7-9 Dec. 2009, Baltimore, MD, USA.

Kumar, E. N. ; Maheta, V. D. ; Purawat, S. ; Islam, A. E. ; Olsen, C. ; Ahmed, K. ; Alam, M. A. ; Mahapatra, S. (2007) Material dependence of NBTI physical mechanism in Silicon Oxynitride (SiON) p-MOSFETs: A comprehensive study by Ultra-fast On-the-fly (UF-OTF) I_DLIN technique In: 2007 IEEE International Electron Devices Meeting, IEDM.

Mahapatra, S. ; Ahmed, K. ; Varghese, D. ; Islam, A. E. ; Gupta, G. ; Madhav, L. ; Saha, D. ; Alam, M. A. (2007) On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? In: 2007 45th Annual IEEE International Reliability Physics Symposium, 15-19 April, 2007, Phoenix, AZ, USA.

Islam, A. E. ; Kumar, E. N. ; Das, H. ; Purawat, S. ; Maheta, V. ; Aono, H. ; Murakami, E. ; Mahapatra, S. ; Alam, M. A. (2007) Theory and practice of on-the-fly and ultra-fast V_T measurements for NBTI degradation: Challenges and opportunities In: 2007 IEEE International Electron Devices Meeting, IEDM, 10-12 Dec, 2007, Washington, DC, USA.

Islam, A. E. ; Gupta, G. ; Mahapatra, S. ; Krishnan, A. T. ; Ahmed, K. ; Nouri, F. ; Oates, A. ; Alam, M. A. (2006) Gate leakage vs. NBTI in plasma nitrided oxides: characterization, physical principles and optimization In: 2006 International Electron Devices Meeting, IEDM '06, 11-13 Dec, 2006, San Francisco, CA, USA.

Kurnars, P. B. ; Dalei, T. R. ; Varghese, D. ; Saba, D. ; Mahapatra, S. ; Alam, M. A. (2005) Impact of substrate bias on p-MOSFET negative bias temperature instability In: Proceedings of 2005 43rd Annual IEEE International Reliability Physics Symposium., 17-21 April, 2005, San Jose, CA, USA.

Mahapatra, S. ; Alam, M. A. ; Bharath Kumar, P. ; Dalei, T. R. ; Saha, D. (2004) Mechanism of negative bias temperature instability in CMOS devices degradation, recovery and impact of nitrogen In: 2004 IEEE International Electron Devices Meeting, IEDM Technical Digest, 13-15 Dec, 2004, San Francisco, CA, USA.

Mahapatra, S. ; Kumar, P. B. ; Alam, M. A. (2003) A new observation of enhanced Bias Temperature Instability in thin gate oxide p-MOSFETs In: 2003 IEEE International Electron Devices Meeting, IEDM '03 Technical Digest, 8-10 Dec, 2003, Washington, DC, USA.

Mahapatra, S. ; Alam, M. A. (2002) A predictive reliability model for PMOS bias temperature degradation In: 2002 International Electron Devices Meeting, IEDM '02, 8-11 Dec, 2002, San Francisco, CA, USA.