Items where Author is "Ahmet, Parhat"Group by: Item Type | No Grouping Jump to: Article Number of items: 6. ArticleTsutsui, Kazuo ; Kobayashi, Yusuke ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Iwai, Hiroshi (2011) Analysis of threshold voltage variations in fin field effect transistors Key Engineering Materials, 470 . pp. 194-200. ISSN 1013-9826 Kobayashi, Yusuke ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Tsutsui, Kazuo ; Iwai, Hiroshi (2010) Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness Microelectronics Reliability, 50 (3). pp. 332-337. ISSN 0026-2714 Kobayashi, Yusuke ; Tsutsui, Kazuo ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Iwai, Hiroshi (2010) Analysis of threshold voltage variation in fin field effect transistors: separation of short channel effects Japanese Journal of Applied Physics, 49 . pp. 044201_1-044201_6. ISSN 0021-4922 Kobayashi, Yusuke ; Sachid, Angada B. ; Tsutsui, Kazuo ; Kakushima, Kuniyuki ; Ahmet, Parhat ; Ramgopal Rao, V. ; Iwai, H. (2008) Analysis of threshold voltage variations of FinFETs relating to short channel effects Electro-Chemical-Society (ECS) Transactions, 16 (40). pp. 23-27. ISSN 1938-5862 Kobayashi, Yusuke ; Raghunathan Manoj, C. ; Tsutsui, Kazuo ; Hariharan, Venkanarayan ; Kakushima, Kuniyuki ; Ramgopal Rao, V. ; Ahmet, Parhat ; Iwai, Hiroshi (2007) Parasitic effects in multi-gate MOSFETs IEICE - Transactions on Communications, E90-C (10). pp. 2051-2056. ISSN 0916-8516 Kobayashi, Yusuke ; Tsutsui, Kazuo ; Kakushima, Kuniyuki ; Hariharan, Venkanarayan ; Ramgopal Rao, V. ; Ahmet, Parhat ; Iwai, Hiroshi (2007) Parasitic effects depending on shape of spacer region on FinFETs Electro-Chemical-Society (ECS) Transactions, 6 (4). pp. 83-87. ISSN 1938-5862 |

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