Krishnan, R. ; David, C. ; Ajikumar, P. K. ; Nithya, R. ; Tripura Sundari, S. ; Dash, S. ; Panigrahi, B. K. ; . . . ; Tyagi, A. K. ; Jayaram, Vikram ; Raj, Baldev (2013) Reactive pulsed laser deposition of titanium nitride thin films: effect of reactive gas pressure on the structure, composition, and properties Journal of Materials, 2013 . Article ID 128986, 5 pages. ISSN 2314-4866
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Official URL: http://www.hindawi.com/journals/jma/2013/128986/
Related URL: http://dx.doi.org/10.1155/2013/128986
Abstract
Titanium nitride (TiN) thin films were deposited by reactive pulsed laser deposition (RPLD) technique. For the first time, the composition evaluated from proton elastic backscattering spectrometry, in a quantitative manner, revealed a dependence on the partial pressure of nitrogen from 1 to 10 Pa. Grazing incidence-XRD (GI-XRD) confirmed the formation of predominantly nanocrystalline TiN phase with a crystallite size of around 30 nm. The hardness showed maximum value of ~30 GPa when the composition is near stoichiometric and the friction coefficient was found to be as low as 0.3. In addition, a systematic optical response was observed as a function of deposition pressure from the surface of the TiN films using spectroscopic ellipsometry.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Hindawi Publishing Corporation. |
| ID Code: | 97937 |
| Deposited On: | 16 Jan 2014 10:29 |
| Last Modified: | 22 Jan 2014 09:01 |
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