Pal, Suparna ; Singh, S. D. ; Porwal, S. ; D’Souza, S. W. ; Barman, S. R. ; Oak, S. M. (2012) Blueshift in sulfur treated GaAsP/AlGaAs near surface quantum well Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 30 (2). 021401_1-021401_5. ISSN 0734-2101
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Official URL: http://avspublications.org/jvsta/resource/1/jvtad6...
Related URL: http://dx.doi.org/10.1116/1.3679394
Abstract
Large blueshift was observed in a near-surface GaAs0.86P0.14/Al0.7Ga0.3As quantum well upon treatment with Na2S·xH2O solution. Very slow etching with simultaneous surface passivation of the quantum well was obtained using this chemical treatment. Photoreflectance (PR) spectra exhibit maximum blueshift of 28 meV after treating the quantum well surface with Na2S·xH2O solution for 30 min (top layer thickness reduced to 10 Å). The blueshift is attributed to an increase in the confinement and/or an image charge effect due to the penetration of the wave function into vacuum. The blueshift is accompanied by a significant reduction in the broadening parameter of the observed e1-lh1 transition in PR spectra indicating effective passivation along with an increase in the confinement.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to AVS (American Vacuum Society). |
| Keywords: | Aluminium Compounds, Etching, Gallium Arsenide, III-V Semiconductors, Passivation, Photoreflectance, Semiconductor Quantum Wells, Spectral Line Shift, Wave Functions |
| ID Code: | 96425 |
| Deposited On: | 19 Dec 2012 05:39 |
| Last Modified: | 19 Dec 2012 05:39 |
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