Likovich, Edward M. ; Jaramillo, Rafael ; Russell, Kasey J. ; Ramanathan, Shriram ; Narayanamurti, Venkatesh (2011) High-current-density monolayer CdSe/ZnS Quantum dot light-emitting devices with oxide electrodes Advanced Materials, 23 (39). pp. 4521-4525. ISSN 0935-9648
Full text not available from this repository.
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/adma.20...
Related URL: http://dx.doi.org/10.1002/adma.201101782
Abstract
Films of semiconductor quantum dots (QDs) are promising for lighting technologies, but controlling how current flows through QD films remains a challenge. A new design for a QD light-emitting device that uses atomic layer deposition to fill the interstices between QDs with insulating oxide is introduced. It funnels current through the QDs themselves, thus increasing the light emission yield.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons. |
| Keywords: | Light-emitting Devices; Oxides; Quantum Dots; Atomic Layer Deposition; Photovoltaic Devices |
| ID Code: | 87564 |
| Deposited On: | 19 Mar 2012 12:57 |
| Last Modified: | 19 Mar 2012 12:57 |
Repository Staff Only: item control page
