Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence

Likovich, Edward M. ; Jaramillo, Rafael ; Russell, Kasey J. ; Ramanathan, Shriram ; Narayanamurti, Venkatesh (2011) Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence Applied Physics Letters, 99 (15). 151910_1-151910_3. ISSN 0003-6951

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Official URL: http://apl.aip.org/resource/1/applab/v99/i15/p1519...

Related URL: http://dx.doi.org/10.1063/1.3647622

Abstract

We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor.

Item Type:Article
Source:Copyright of this article belongs to American Institute of Physics.
Keywords:Aluminium; Cathodoluminescence; Defect States; II-VI Semiconductors; Photoluminescence; Scanning Tunnelling Microscopy; Semiconductor Thin Films; Sputter Deposition; Wide Band Gap Semiconductors; Zinc Compounds
ID Code:87563
Deposited On:19 Mar 2012 12:56
Last Modified:19 Mar 2012 12:56

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