O'Shea, J. J. ; Reaves, C. M. ; DenBaars, S. P. ; Chin, M. A. ; Narayanamurti, V. (1996) Conduction band offsets in ordered-GaInP/GaAs heterostructures studied by ballistic-electron-emission microscopy Applied Physics Letters, 60 (20). pp. 3022-3024. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v69/i20/p3022...
Related URL: http://dx.doi.org/10.1063/1.116826
Abstract
Ordered-GaInP/GaAs heterostructures have been studied using ballistic-electron-emission microscopy (BEEM). The GaInP/GaAs conduction band offset was found to decrease with increasing order. Samples were grown simultaneously on different misoriented substrates to vary the degree of order in the GaInP. Concurrent scanning tunneling microscopy and BEEM images show ridge structures in the topography and contrast in the BEEM current that may correspond to ordered domains in the GaInP. Room temperature conduction band offsets of 137 and 86 meV were measured using BEEM spectroscopy for GaInP with 2 K band gaps of 1.97 and 1.89 eV, respectively.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Gallium Arsenides; Gallium Phosphides; Indium Phosphides; Heterostructures; Conduction Bands; Electronic Structure; STM |
| ID Code: | 87513 |
| Deposited On: | 19 Mar 2012 06:54 |
| Last Modified: | 19 Mar 2012 06:54 |
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