Singh, Gurvinderjit ; Tiwari, V. S. ; Gupta, P. K. (2010) Oxygen-vacancy-related dielectric relaxation and electric conduction in KNbO3 ceramic Integrated Ferroelectrics, 117 (1). pp. 1-10. ISSN 1058-4587
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Official URL: http://www.tandfonline.com/doi/abs/10.1080/1058458...
Related URL: http://dx.doi.org/10.1080/10584587.2010.489416
Abstract
The temperature and frequency dependent dielectric and conductivity properties were measured on as-sintered as well as oxygen annealed KNbO3 ceramics. The results show that in addition to phase transition peaks, well defined relaxation peaks are observed in the temperature range 450-700 K. These peaks could be suppressed by annealing the samples in the oxygen atmosphere. The dc-conductivity and maximum dielectric constant values decreases after oxygen annealing. The results are explained on the basis of defect concentration and their dynamics.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Taylor and Francis Group. |
| Keywords: | KNbO3; Dielectric Permittivity; Impedance Spectroscopy; Oxygen Defects |
| ID Code: | 83479 |
| Deposited On: | 21 Feb 2012 07:48 |
| Last Modified: | 21 Feb 2012 07:48 |
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