Sarkar, S. ; Chakraborty, P. ; Sanyal, M. K. ; Caccavale, F. ; Arora, B. M. (2000) Interfacial diffusion in a double quantum well structure Surface and Interface Analysis, 29 (10). pp. 659-662. ISSN 0142-2421
Full text not available from this repository.
Official URL: http://onlinelibrary.wiley.com/doi/10.1002/1096-99...
Related URL: http://dx.doi.org/10.1002/1096-9918(200010)29:10<659::AID-SIA917>3.0.CO;2
Abstract
We have studied interdiffusion processes occurring in a metal organic chemical vapour deposition (MOCVD) grown InP/In0.33Ga0.67As/InP/In0.33Ga0.67As/InP double quantum well structure through secondary ion mass spectrometry and high-resolution x-ray diffraction measurements along with a simulation programme. Results show an interdiffusion of phosphorus into the quantum wells and the presence of a 10 nm thick intermixed zone of In, As and P formed in-between the cap layer and the subsequent quantum well. Combination of these two techniques along with the simulation is a novel approach towards the understanding and quantification of in-depth compositional variation in thin films, in general.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to John Wiley and Sons. |
| Keywords: | Diffusion; Interface; SIMS; X-ray Diffraction; Quantum Well |
| ID Code: | 83160 |
| Deposited On: | 17 Feb 2012 04:22 |
| Last Modified: | 17 Feb 2012 04:22 |
Repository Staff Only: item control page
