Rahman, Atikur ; Sanyal, Milan K. (2008) The tunable bistable and multistable memory effect in polymer nanowires Nanotechnology, 19 (39). 395203_1-395203_4. ISSN 0957-4484
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Official URL: http://iopscience.iop.org/0957-4484/19/39/395203
Related URL: http://dx.doi.org/10.1088/0957-4484/19/39/39520
Abstract
Tunable bistable and multistable resistance switching in conducting polymer nanowires has been reported. These wires show reproducible switching transition under several READ-WRITE-ERASE cycles. The switching is observed at low temperature and the ON/OFF resistance ratio for the voltage biased switching transition was found to be more than 103. Current biased measurements show lower ON/OFF ratio and some of the nanowires exhibit a multistable switching transition in current biased measurements. The threshold voltage for switching and the ON/OFF resistance ratio can be tuned by changing doping concentration of the nanowires.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Institute of Physics. |
| ID Code: | 83151 |
| Deposited On: | 17 Feb 2012 04:25 |
| Last Modified: | 17 Feb 2012 04:25 |
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