Sharma, Dinesh K. ; Ramanathan, K. V. (1984) Modification of most I-V characteristics by self-heating Solid-State Electronics, 27 (11). pp. 989-994. ISSN 0038-1101
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Official URL: http://www.sciencedirect.com/science/article/pii/0...
Related URL: http://dx.doi.org/10.1016/0038-1101(84)90072-8
Abstract
A MOS transistor, when passing drain current, dissipates power in the channel region. This results in a temperature rise within the channel area, which can modify the I-V behaviour of the transistor. In this paper, we have calculated the channel temperature as a result of power dissipated by the device, by solving the heat diffusion equation. The modified I-V behaviour of the MOS transistor due to this channel heating has been predicted and matches experimentally observed phenomena. In particular, the negative dynamic resistance observed in the saturation region of MOS transistors operating at elevated power densities has been explained.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 82917 |
| Deposited On: | 15 Feb 2012 12:26 |
| Last Modified: | 15 Feb 2012 12:26 |
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