Ganesan, R. ; Mascarenhas, S. ; Sarma, N. V. G. (1984) Ultra-low noise GaAs FET amplifiers for L and C bands Proceedings of the National Symposium on Microwave Communication Systems, Madras . pp. 98-111.
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Abstract
Ultra Low Noise Gals PET amplifiers incorporation & source inductance feedback to obtain low input VSWR have been deacribed. The measured average noise temperature of 52K - (~oise Figure 0.7d~) at room temperature of the L-Band Amplifier reduces to 14K (Noise Figure 0.2dB) when cooled to a temperature of 24K. The C-Band Amplifier has an average noiae temperature of 120K (~oise Figure 1,Sd~) at room temperature.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the National Symposium on Microwave Communication Systems, Madras. |
| ID Code: | 81081 |
| Deposited On: | 03 Feb 2012 13:48 |
| Last Modified: | 03 Feb 2012 13:48 |
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