Pradhan, Gopal K. ; Bera, Achintya ; Kumar, Pradeep ; Muthu, D. V. S. ; Sood, A. K. (2012) Raman signatures of pressure induced electronic topological and structural transitions in Bi2Te3 Solid State Communications, 152 (4). pp. 284-287. ISSN 0038-1098
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/j.ssc.2011.11.029
Abstract
We report Raman signatures of electronic topological transition (ETT) at 3.6 GPa and rhombohedral (α-Bi2Te3) to monoclinic (β-Bi2Te3) structural transition at ~8 GPa. At the onset of ETT, a new Raman mode appears near 107 cm−1 which is dispersionless with pressure. The structural transition at ~8 GPa is marked by a change in pressure derivative of A1g and Eg mode frequencies as well as by appearance of new modes near 115 cm−1 and 135 cm−1. The mode Gruneisen parameters are determined in both the α and β-phases.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Bi2Te3; C. High Pressure Raman; D. Electronic Topological Transition |
| ID Code: | 79908 |
| Deposited On: | 30 Jan 2012 05:07 |
| Last Modified: | 18 May 2016 22:06 |
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