Inani, A. ; Rao, V. R. ; Cheng, B. ; Zeitzoff, P. ; Woo, J. C. S. (1999) Capacitance degradation due to fringing field in deep sub-micron MOSFETs with high-K gate dielectrics 29th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium . pp. 160-163.
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Abstract
High-K gate dielectrics have been under extensive investigation for use in sub-100nm MOSFET's to suppress gate leakage. However, thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper the capacitance degradation resulting from this effect is analyzed & simple technique to model this effect is presented.
| Item Type: | Article |
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| Source: | Copyright of this article belongs to 29th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium. |
| ID Code: | 79803 |
| Deposited On: | 28 Jan 2012 11:43 |
| Last Modified: | 18 May 2016 22:02 |
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