Dunga, M. V. ; Kumar, A. ; Ramgopal Rao, V. (2001) Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique Proceedings of 8th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Singapore . pp. 254-257.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IPFA.2001.941497
Abstract
In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of 8th IEEE International Symposium on Physical and Failure Analysis of Integrated Circuits, Singapore. |
| ID Code: | 79785 |
| Deposited On: | 28 Jan 2012 11:45 |
| Last Modified: | 28 Jan 2012 11:45 |
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