Srinivas, P. ; Tiwari, S. P. ; Raval, H. N. ; Ramesh, R. N. ; Cahyadi, T. ; Mhaisalkar, S. G. ; Rao, V. R. (2007) A simple and direct method for interface characterization of OFETs Proceedings of the 14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India . pp. 306-309.
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Official URL: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumb...
Related URL: http://dx.doi.org/10.1109/IPFA.2007.4378107
Abstract
Multi-frequency transconductance technique is successfully applied in this work for the first time for interface characterization of OFETs. Standard charge pumping measurements are used on silicon MOSFETs for the validation of MFT technique. The method is implemented on pentacene as well as the P3HT based OFETs with SiO2 as the gate dielectric. Our results show interface state densities in the range of 1012/cm2/eV for both the samples. The P3HT films are also shown to have additional trap centres which respond to frequencies above 100 kHz. Our results therefore clearly indicate that the MFT technique is indeed a highly useful technique for interface characterization of OFETs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Proceedings of the 14th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Bangalore, India. |
| ID Code: | 79750 |
| Deposited On: | 28 Jan 2012 11:53 |
| Last Modified: | 28 Jan 2012 11:53 |
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