Rath, Arup K. ; Sahu, Satyajit ; Pal, Amlan J. (2006) Electrical bistability in a xanthene class molecule: conduction mechanisms Applied Physics Letters, 89 (14). pp. 142110-142112. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v89/i14/p1421...
Related URL: http://dx.doi.org/10.1063/1.2358946
Abstract
The author study conduction mechanism in two conducting states of a bistable device at 10-300 K range. They find that in the electrical bistable devices, electrical switching is associated with a change in the conduction mechanism. Device current in the low-conducting state follows an injection-limited mechanism. The current in the high-conducting state conforms a bulk-dominated mechanism, namely, space-charge limited conduction with an exponential distribution of traps. The bistability has an associated memory phenomenon. The devices exhibit read-only and random-access memory applications for several hours.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Aluminium; Indium Compounds; Organic Compounds; Conducting Materials; Molecular Electronics; Space-charge-limited Conduction; Tunnelling; Switching; Read-only Storage; Random-access Storage |
| ID Code: | 65734 |
| Deposited On: | 18 Oct 2011 09:02 |
| Last Modified: | 18 Oct 2011 09:02 |
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