Pal, R. ; Dhaul, A. ; Agarwal, S. K. ; Pal, D. ; Bose, D. N. (1998) Effective techniques for reduction of silicon impurity in chloride vapor phase epitaxial growth of GaInAs Materials Research Bulletin, 33 (2). pp. 261-267. ISSN 0025-5408
Full text not available from this repository.
Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00255...
Related URL: http://dx.doi.org/10.1016/S0025-5408(97)00224-9
Abstract
Reduction of unintentional silicon impurity in GaInAs was obtained by using a SiC-coated graphite boat containing Ga-In source alloy materials. A maximum mobility of 2800 cm2/(V·s) and a carrier concentration of 1.4 × 1018 cm-3 were obtained at room temperature with a quartz boat. The addition of a small amount of dysprosium as a gettering material resulted in reducing the background concentration and also the mobility. However, use of a SiC-coated graphite boat resulted in an increase of the room temperature mobility to 5100 cm2/(V·s) and a decrease in carrier concentration to 2.8 × 1016 cm-3.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Alloys; A. Metals; A. Semiconductors; B. Epitaxial Growth; B. Vapor Deposition |
| ID Code: | 5811 |
| Deposited On: | 19 Oct 2010 10:52 |
| Last Modified: | 19 May 2011 12:02 |
Repository Staff Only: item control page
