Paul, T. K. ; Bose, D. N. (1992) Photoluminescence on InP: effect of surfaces and interfaces Proceedings of SPIE, 1622 (30). ISSN 0277-786X
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Related URL: http://dx.doi.org/10.1117/12.636841
Abstract
It has been shown that improved surface properties of InP could be achieved through HF and sulfide NaS. 9HO) treatments. The photoluminescence (PL) intensity was found to increase due to reduction in interface state density after chemical treatments. X-ray photo-electron spectroscopy (XPS) studies revealed that the formation of IflF3 and P2S3 after HF and sulfide treatment respectively are responsible for better interfacial behaviour. I.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The International Society for Optical Engineering. |
| ID Code: | 5743 |
| Deposited On: | 19 Oct 2010 11:11 |
| Last Modified: | 02 Nov 2011 12:48 |
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