Resonance Raman scattering in HgTe: TO-phonon and forbidden-LO-phonon cross section near the E1 gap

Ingale, Alka ; Bansal, M. L. ; Roy, A. P. (1989) Resonance Raman scattering in HgTe: TO-phonon and forbidden-LO-phonon cross section near the E1 gap Physical Review B: Condensed Matter and Materials Physics, 40 (18). pp. 12353-12358. ISSN 1098-0121

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Official URL: http://prb.aps.org/abstract/PRB/v40/i18/p12353_1

Related URL: http://dx.doi.org/10.1103/PhysRevB.40.12353

Abstract

In this paper we present Raman intensity variation of the TO phonon and the forbidden LO phonon in HgTe. We evaluate the optical-phonon deformation potentials near the E1 gap (d105=24 eV and d305=20 eV). The differences that arise as a consequence of the inverted band structure of HgTe are discussed and it is shown that the standard macroscopic formalism for Raman susceptibility for the TO-phonon mode in terms of linear susceptibility can be applied to HgTe also. Investigation of forbidden-LO-phonon intensity reveals that impurity-induced scattering is dominant and interband electron-phonon scattering has to be explicitly included to account for its variation with laser wavelength.

Item Type:Article
Source:Copyright of this article belongs to The American Physical Society.
ID Code:56492
Deposited On:24 Aug 2011 11:23
Last Modified:24 Aug 2011 11:23

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