Sen, S. ; Bose, D. N. (1984) Electrical and optical properties of single crystal In2Te3 and Ga2Te3 Solid State Communications, 50 (01). pp. 39-42. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/003810...
Related URL: http://dx.doi.org/10.1016/0038-1098(84)90055-3
Abstract
Electrical conductivity and thermopower measurements are reported for the defect semiconductors p-In2Te3 and n-Ga2Te3. The hole mobility μ p in the former varied as Tn where N=+5.98 for T<350 K and n=-4.13 for T>350 K showing a maximum of 210 cm2V-1 sec-1 at 350 K. Electron mobility in n-Ga2Te3 also went through a maximum at 320 K. The optical band-gaps for both were found to be direct, with values of 1.01 and 1.08 eV for In2Te3 and Ga2Te3 respectively at 300 K. Pronounced effects of annealing on TEP and optical absorption gave evidence of defect ordering at low temperatures followed by defect creation at T>350 K.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 5624 |
| Deposited On: | 19 Oct 2010 11:43 |
| Last Modified: | 23 May 2011 04:20 |
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