Observation of electronic states confined in surface quantum wells and above quantum barriers with modulated reflectivity

Parks, C. ; Ramdas, A. K. ; Melloch, M. R. ; Steblovsky, G. ; Ram-Mohan, L. R. ; Luo, H. (1994) Observation of electronic states confined in surface quantum wells and above quantum barriers with modulated reflectivity Solid State Communications, 92 (7). pp. 563-567. ISSN 0038-1098

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Official URL: http://www.sciencedirect.com/science/article/pii/0...

Related URL: http://dx.doi.org/10.1016/0038-1098(94)00625-3

Abstract

The modulated reflectivity spectra of a surface quantum well, composed of vacuum- /GaAs/AlxGa1-xAs, exhibit in a striking manner optical transitions associated with electronic states confined within the quantum well. The spectra reveal numerous distinct signatures of the transitions between quantum confined states in the GaAs surface layer, their energies demonstrably controlled by its width. Equally remarkable signatures appear, which can be traced to localized electronic levels above the AlxGa1-xAs single quantum barrier formed by this structure.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:A. Semiconductors; D. Quantum Localization; E. Light Absorption and Reflection
ID Code:52373
Deposited On:03 Aug 2011 14:16
Last Modified:03 Aug 2011 14:16

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