Venugopal Rao, G. ; Amarendra, G. ; Viswanathan, B. ; Kanakaraju, S. ; Balaji, S. ; Mohan, S. ; Sood, A. K. (2002) Studies on Ge/CeO2 thin film system using positron beam and Raman spectroscopy Thin Solid Films, 406 (1-2). pp. 250-254. ISSN 0040-6090
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Official URL: http://www.sciencedirect.com/science/article/pii/S...
Related URL: http://dx.doi.org/10.1016/S0040-6090(02)00056-1
Abstract
Positron beam and Raman spectroscopic studies are reported on a Ge/CeO2 thin film system grown on a Si substrate. The variation of the Doppler line shape S-parameter, as a function of positron beam energy, shows a pronounced maximum corresponding to the Ge-region of as-grown film, while no equivalent feature is seen in the sample annealed at 773 K. The Raman spectrum of the as-grown film exhibits a broad band, as opposed to a sharp peak observed for the annealed sample. Based on the correlated evidence from the two measurements, it is concluded that the Ge layer in the as-grown sample is amorphous, containing a large concentration of structural vacancies. Isochronal annealing measurements of the lineshape parameter in the temperature range of 300 to 773 K indicate a rather continuous transformation of amorphous Ge to the crystalline state.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
Keywords: | Amorphous Materials; Germanium; Positron Spectroscopy; Raman Scattering; Defects |
ID Code: | 50202 |
Deposited On: | 22 Jul 2011 13:52 |
Last Modified: | 22 Jul 2011 13:52 |
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