Okabayashi, J. ; Mizokawa, T. ; Sarma, D. D. ; Fujimori, A. ; Slupinski, T. ; Oiwa, A. ; Munekata, H. (2002) Electronic structure of In1−xMnxAs studied by photoemission spectroscopy: comparison with Ga1−xMnxAs Physical Review B: Condensed Matter and Materials Physics, 65 (16). 161203_1-161203_4. ISSN 1098-0121
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Official URL: http://prb.aps.org/abstract/PRB/v65/i16/e161203
Related URL: http://dx.doi.org/10.1103/PhysRevB.65.161203
Abstract
We have investigated the electronic structure of the p-type diluted magnetic semiconductor In1−xMnxAs by photoemission spectroscopy. The Mn 3d partial density of states is found to be basically similar to that of Ga1−xMnxAs. However, the impurity-band-like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga1−xMnxAs. This difference would explain the difference in transport, magnetic and optical properties of In1−xMnxAs and Ga1−xMnxAs. The different electronic structures are attributed to the weaker Mn 3d-As4p hybridization in In1−xMnxAs than in Ga1−xMnxAs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to The American Physical Society. |
| ID Code: | 46285 |
| Deposited On: | 04 Jul 2011 06:57 |
| Last Modified: | 04 Jul 2011 06:57 |
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