Temperature effects on the Raman spectra of graphenes: dependence on the number of layers and doping

Late, Dattatray J. ; Maitra, Urmimala ; Panchakarla, L. S. ; Waghmare, Umesh V. ; Rao, C. N. R. (2011) Temperature effects on the Raman spectra of graphenes: dependence on the number of layers and doping Journal of Physics: Condensed Matter, 23 (5). No pp. given. ISSN 0953-8984

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Official URL: http://iopscience.iop.org/0953-8984/23/5/055303

Related URL: http://dx.doi.org/10.1088/0953-8984/23/5/055303

Abstract

Temperature effects on the various features in the Raman spectra of several graphene samples and graphene nanoribbons have been investigated over the temperature range 77-573 K. The temperature coefficient of the G and 2D band frequencies are found to depend on the number of layers, the former decreasing with the increase in the number of layers. The number of layers also affects the temperature coefficients of the FWHMs of these bands. Doping of graphene affects these Raman features significantly. The defect-related bands D and D' bands are not sensitive to the number of layers or doping. We can understand the observed temperature effects on the basis of electron-phonon coupling, thermal expansion and anharmonic phonon-phonon interactions.

Item Type:Article
Source:Copyright of this article belongs to Institute of Physics.
ID Code:44703
Deposited On:23 Jun 2011 06:00
Last Modified:12 Jul 2012 10:17

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