Hansch, W. ; Ramgopal Rao, V. ; Fink, C. ; Kaesen, F. ; Eisele, I. (1998) Electric field tailoring in MBE-grown vertical sub-100 nm MOSFETs Thin Solid Films, 321 (1-2). pp. 206-214. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00406...
Related URL: http://dx.doi.org/10.1016/S0040-6090(98)00474-X
Abstract
We introduce the concept of electric-field-tailoring in MBE-grown vertical metal-oxide semiconductor field-effect transistors (MOSFETs) and show that significant improvements in terms of supply voltage, current and speed are achievable in such MOSFETs by employing a planar-doped-barrier MOSFET (PDBFET) concept. Investigation of electrical characteristics and carrier transport in sub-100 nm channel PDBFETs shows the predicted improvements compared with classical MOSFETs.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | Si-MBE; Vertical sub-100 nm MOSFETs; PDBFET; Electric-field Tailoring; Velocity Overshoot; Avalanche Suppression |
| ID Code: | 41572 |
| Deposited On: | 30 May 2011 09:25 |
| Last Modified: | 30 May 2011 09:25 |
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