Yi, Wei ; Kim, Taeseok ; Shalish, Ilan ; Loncar, Marko ; Aziz, Michael J. ; Narayanamurti, Venkatesh (2010) Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting Applied Physics Letters, 97 (15). 151103_1-151103_3. ISSN 0003-6951
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Official URL: http://apl.aip.org/resource/1/applab/v97/i15/p1511...
Related URL: http://dx.doi.org/10.1063/1.3500981
Abstract
The spectral responsivity for Schottky photodiodes based on the GaNxAs1-x alloys synthesized using nitrogen (N) ion implantation followed by pulsed-laser melting and rapid thermal annealing is presented. An N-induced redshift up to 250 meV (180 nm) in the photocurrent onset energy (wavelength) is observed. The N concentration dependence agrees with the values measured by photomodulated reflectance and ballistic electron emission microscopy, and with the calculation by the band anticrossing model for the splitting of the conduction band in GaNxAs1-x.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Institute of Physics. |
ID Code: | 30732 |
Deposited On: | 27 Dec 2010 08:22 |
Last Modified: | 17 May 2016 13:20 |
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