Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire

Shalish, I. ; Seryogin, G. ; Yi, W. ; Bao, J. M. ; Zimmler, M. A. ; Likovich, E. ; Bell, D. C. ; Capasso, F. ; Narayanamurti, V. (2009) Epitaxial catalyst-free growth of InN nanorods on c-plane sapphire Nanoscale Research Letters, 4 (6). pp. 532-537. ISSN 1931-7573

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Official URL: http://www.springerlink.com/content/e07g2653q13062...

Related URL: http://dx.doi.org/10.1007/s11671-009-9276-z

Abstract

We report observation of catalyst-free hydride vapor phase epitaxy growth of InN nanorods. Characterization of the nanorods with transmission electron microscopy, and X-ray diffraction show that the nanorods are stoichiometric 2H-InN single crystals growing in the [0001] orientation. The InN rods are uniform, showing very little variation in both diameter and length. Surprisingly, the rods show clear epitaxial relations with the c-plane sapphire substrate, despite about 29% of lattice mismatch. Comparing catalyst-free with Ni-catalyzed growth, the only difference observed is in the density of nucleation sites, suggesting that Ni does not work like the typical vapor-liquid-solid catalyst, but rather functions as a nucleation promoter by catalyzing the decomposition of ammonia. No conclusive photoluminescence was observed from single nanorods, while integrating over a large area showed weak wide emissions centered at 0.78 and at 1.9 eV.

Item Type:Article
Source:Copyright of this article belongs to Springer-Verlag New York Inc.
Keywords:InN; Nanorods; Nanowires; Epitaxial Growth; Sapphire; Catalyst-free; Ni
ID Code:30726
Deposited On:27 Dec 2010 08:23
Last Modified:17 May 2016 13:20

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