Ruzmetov, Dmitry ; Heiman, Don ; Claflin, Bruce B. ; Narayanamurti, Venkatesh ; Ramanathan, Shriram (2009) Hall carrier density and magnetoresistance measurements in thin-film vanadium dioxide across the metal-insulator transition Physical Review B, 79 (15). 153107_1-153107_4. ISSN 1098-0121
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Official URL: http://link.aps.org/doi/10.1103/PhysRevB.79.153107
Related URL: http://dx.doi.org/10.1103/PhysRevB.79.153107
Abstract
Temperature-dependent magnetotransport measurements in magnetic fields of up to 12 T were performed on thin-film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1 cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.
Item Type: | Article |
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Source: | Copyright of this article belongs to American Physical Society. |
ID Code: | 30717 |
Deposited On: | 27 Dec 2010 08:25 |
Last Modified: | 17 May 2016 13:19 |
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