Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs

Rubin, M. E. ; Blank, H. -R. ; Chin, M. A. ; Kroemer, H. ; Narayanamurti, V. (1998) Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs Physica E: Low-dimensional Systems and Nanostructures, 2 (1-4). pp. 682-684. ISSN 1386-9477

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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S13869...

Related URL: http://dx.doi.org/10.1016/S1386-9477(98)00139-8

Abstract

Individual GaSb self-assembled quantum dots in a GaAs matrix are imaged and probed using ballisitic electron emission microscopy (BEEM). The nanometer scale lateral resolution of BEEM enables one to inject carriers directly into a single dot and therefore perform local transport measurements without electrically contacting the individual dot. Comparison of BEEM spectra on and off of a dot yields a local conduction band offset between GaSb dots and GaAs of 0.08±02 eV.

Item Type:Article
Source:Copyright of this article belongs to Elsevier Science.
Keywords:Ballistic Electron Emission Microscopy; GaSb; Self-assembled Quantum Dots
ID Code:30692
Deposited On:23 Dec 2010 12:48
Last Modified:11 Jun 2011 06:55

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