Eisenstein, J. P. ; Stormer, H. L. ; Narayanamurti, V. ; Gossard, A. C. ; Wiegmann, W. (1984) Effect of inversion symmetry on the band structure of semiconductor heterostructures Physical Review Letters, 53 (27). pp. 2579-2582. ISSN 0031-9007
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Official URL: http://link.aps.org/doi/10.1103/PhysRevLett.53.257...
Related URL: http://dx.doi.org/10.1103/PhysRevLett.53.2579
Abstract
Two classes of artificial semiconductor heterostructures, differing only in the inversion symmetry of their internal quantum wells, are studied via magnetotransport. The samples consist of GaAs/(AlGa) As layered structures containing two-dimensional hole systems. The results reveal a lifting of the spin degeneracy of the lowest hole subband in the samples with inversion asymmetric quantum wells. In those structures with symmetric wells the subband remains doubly degenerate.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Physical Society. |
| ID Code: | 30649 |
| Deposited On: | 23 Dec 2010 12:58 |
| Last Modified: | 11 Jun 2011 07:03 |
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