Bhat, S. V. ; Jayaram, K. ; Victor, D. ; Muthu, S. ; Sood, A. K. (1992) Electron paramagnetic resonance study of porous silicon Applied Physics Letters, 60 (17). ISSN 0003-6951
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Official URL: http://link.aip.org/link/applab/v60/i17/p2116/s1
Related URL: http://dx.doi.org/10.1063/1.107107
Abstract
Electron paramagnetic resonance studies under ambient conditions of boron-doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 2885 |
| Deposited On: | 09 Oct 2010 05:37 |
| Last Modified: | 23 May 2011 08:04 |
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