Kumar, Sunil ; Kashyap, Subhash C. ; Chopra, K. L. (1992) Electrical transport in n-type bismuth modified a-Ge20Se80 and a-As2Se3 thin films Thin Solid Films, 217 (1-2). pp. 146-151. ISSN 0040-6090
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/004060...
Related URL: http://dx.doi.org/10.1016/0040-6090(92)90621-H
Abstract
Thin films of amorphous (a-) Ge20Se80 - xBix (x = 4,10) and a-As2Se3 - xBix (x = 0.2, 0.5) have been prepared by thermal evaporation and characterized for their electrical and optical properties. The addition of bismuth, in excess of 4 at.%, to p-type a-Ge20Se80 and a-As2Se3 films results in large (several orders of magnitude) changes in the electrical conductivity and conversion of the conductivity from p to n type. A correlation of the electrical and optical data of the modified films suggests that the addition of bismuth causes a Fermi level shift and the electrical transport is predominantly due to hopping of electrons after being excited into localized states the conduction band edge.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 22992 |
| Deposited On: | 25 Nov 2010 13:43 |
| Last Modified: | 28 May 2011 04:38 |
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