Mangalam, R. V. K. ; Ranjith, R. ; Iyo, A. ; Sundaresan, A. ; Krupanidhi, S. B. ; Rao, C. N. R. (2006) Ferroelectricity in Bi26-xMxO40-δ (M=Al and Ga) with the γ-Bi2O3 structure Solid State Communications, 140 (1). pp. 42-44. ISSN 0038-1098
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/S00381...
Related URL: http://dx.doi.org/10.1016/j.ssc.2006.07.015
Abstract
We report on the dielectric properties of bismuth aluminate and gallate with Bi:Al(Ga) ratio of 1:1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group I23) with a~10.18Å rather than in the perovskite structure. This cubic phase is related to the γ -Bi2O3 structure which has the actual chemical formula Bi243+(Bi3+Bi5+)O40-δ. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24f and 2a sites. These compounds exhibit ferroelectric hysteresis at room temperature with a weak polarization.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| Keywords: | A. Ferroelectrics; C. X-ray Scattering; D. Dielectric Response |
| ID Code: | 19141 |
| Deposited On: | 23 Nov 2010 13:26 |
| Last Modified: | 30 Sep 2011 06:50 |
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