Peng, C. -J. ; Hu, H. ; Krupanidhi, S. B. (1993) Electrical properties of strontium titanate thin films by multi-ion-beam reactive sputtering technique Applied Physics Letters, 63 (8). pp. 1038-1040. ISSN 0003-6951
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Official URL: http://link.aip.org/link/?APPLAB/63/1038/1
Related URL: http://dx.doi.org/10.1063/1.109827
Abstract
Thin films of SrTiO3 were deposited by multi-ion-beam reactive sputtering technique using SrO and Ti-metal targets. The dielectric behavior of the films deposited on Pt-coated Si substrates showed thickness dependence. A dielectric constant of 219 at 100 KHz was found for 1.2 µm thick films. A charge storage density of about 15 fC/µ m2 and leakage current density of 106 µ A/cm2 at an electric field of 0.17 MV/cm were obtained for 0.3 µm films. The probable interface layers present between film and silicon substrate, in the case of metal-insulator-silicon configuration, appear to influence the electrical behavior. Preliminary analysis showed that the conduction of the films in high field region was bulk-limited Poole-Frenkel emission mechanisms.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| ID Code: | 18813 |
| Deposited On: | 17 Nov 2010 12:21 |
| Last Modified: | 06 Jun 2011 10:53 |
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