Tondare, V. N. ; Birajdar, B. I. ; Pradeep, N. ; Joag, D. S. ; Lobo, A. ; Kulkarni, S. K. (2000) Self-assembled Ge nanostructures as field emitters Applied Physics Letters, 77 (15). pp. 2394-2396. ISSN 0003-6951
Full text not available from this repository.
Official URL: http://apl.aip.org/resource/1/applab/v77/i15/p2394...
Related URL: http://dx.doi.org/10.1063/1.1316076
Abstract
Self-assembled two-dimensional arrays of Ge islands on Si(111)7×7 were grown by depositing Ge on Si(111)7×7 substrates held at 650 K. It was observed that these islands were conical in shape as well as nearly uniform in size and shape. Consequently, the substrates of about 1 cm2 area were used as field-emitter arrays. It was found that the arrays exhibited a low onset voltage for field emission, large emission current, as well as high current stability.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to American Institute of Physics. |
| Keywords: | Germanium; Elemental Semiconductors; Semiconductor Quantum Dots; Self-assembly; Island Structure; Arrays; Electron Field Emission; Vacuum Microelectronics |
| ID Code: | 18024 |
| Deposited On: | 17 Nov 2010 13:19 |
| Last Modified: | 04 Jun 2011 08:47 |
Repository Staff Only: item control page
