Srinivasan, G. ; Kulkarni, S. K. ; Bhide, V. G. ; Nigavekar, A. S. (1989) Illumination-induced reversible changes in the valence band density of states of hydrogenated amorphous silicon Physics Letters A, 139 (7). pp. 338-342. ISSN 0375-9601
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Official URL: http://linkinghub.elsevier.com/retrieve/pii/037596...
Related URL: http://dx.doi.org/10.1016/0375-9601(89)90464-7
Abstract
Auger electron spectroscopy line shape analysis of the Si L23 VV peak has been performed on hydrogenated amorphous silicon (a-Si:H). Significant changes in the density of states at the bottom of the valence band are observed upon light soaking the material. These changes are reversible upon in situ annealing the specimens at 150°C for two hours. The observed changes are examined for the possible existence of a localized two-hole state in the valence band spectra.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 17938 |
| Deposited On: | 17 Nov 2010 13:29 |
| Last Modified: | 19 May 2011 05:09 |
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