Roychowdhury, Subhajit ; Ghara, Somnath ; Guin, Satya N. ; Sundaresan, A. ; Biswas, Kanishka (2016) Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te Journal of Solid State Chemistry, 233 . pp. 199-204. ISSN 00224596
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Official URL: http://doi.org/10.1016/j.jssc.2015.10.029
Related URL: http://dx.doi.org/10.1016/j.jssc.2015.10.029
Abstract
Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as ∼200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Inc. |
| Keywords: | Topological crystalline insulator, Lead tin telluride, Linear magnetoresistance, Band inversion, Solid solution |
| ID Code: | 128254 |
| Deposited On: | 03 Nov 2022 05:53 |
| Last Modified: | 03 Nov 2022 05:53 |
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