Vishal, B. ; Sharona, H. ; Bhat, U. ; Paul, A. ; Sreedhara, M.B. ; Rajaji, V. ; Sarma, S.C. ; Narayana, C. ; Peter, S.C. ; Datta, R. (2019) Growth of ReS2 thin films by pulsed laser deposition Thin Solid Films, 685 . pp. 81-87. ISSN 0040-6090
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Official URL: http://doi.org/10.1016/j.tsf.2019.06.007
Related URL: http://dx.doi.org/10.1016/j.tsf.2019.06.007
Abstract
We present results on growth of ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001)ReS2 ⊥ (0001)Al2O3 and (0001)ReS2 ⊥ (0001)MoS2 ∥ (0001)Al2O3 at deposition temperature below 300 °C. Films are polycrystalline grown at temperature above 300 °C. The smoothness and epitaxial quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 thin film over large area (10 × 10 mm2) for practical device application.
Item Type: | Article |
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Source: | Copyright of this article belongs to Elsevier Science. |
ID Code: | 124173 |
Deposited On: | 08 Nov 2021 05:56 |
Last Modified: | 08 Nov 2021 05:56 |
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