A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs

Abstract

The time kinetics of threshold voltage shift (ΔV T ) is measured for negative-bias temperature instability (NBTI) and time-dependent defect spectroscopy (TDDS) experiments by an ultra-fast (10-μs delay) method in gate-first high-k metal gate (HKMG) planar p-MOSFETs and replacement metal gate HKMG p-FinFETs. The mean NBTI stress-recovery time kinetics obtained from multiple smallarea MOSFETs and few-fin FinFETs at different values of stress bias (V GSTR ) and temperature (T) is modeled by uncorrelated contributions from interface (ΔV IT ) and bulk (ΔV OT ) trap generation and trapping of holes (ΔV HT ) in pre-existing defects. The time constant associated with recovery steps and the impact of each step for multiple TDDS sweeps on a single device and after NBTI in multiple devices are compared. The NBTI-induced ΔV T distribution shape is verified using TDDS charge impact. The shift in mean and variance of NBTI-induced ΔV T and post-stress V T distributions is modeled.