Prasad, S. ; Paul, A. (2011) Growth mechanism of phases by interdiffusion and diffusion of species in the niobium–silicon system Acta Materialia, 59 (4). pp. 1577-1585. ISSN 1359-6454
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Official URL: http://doi.org/10.1016/j.actamat.2010.11.022
Related URL: http://dx.doi.org/10.1016/j.actamat.2010.11.022
Abstract
The integrated diffusion coefficient of the phases and the tracer diffusion coefficients of the species are determined in the Nb–Si system by the diffusion couple technique. The diffusion rate of Si is found to be faster than that of Nb in both the NbSi2 and Nb5Si3 phases. The possible atomic mechanism of diffusion is discussed based on the crystal structure and on available details of the defect concentration data. The faster diffusion rate of Si in the Nb5Si3 phase is found to be unusual. The growth mechanism of the phases is also discussed on the basis of the data calculated in this study.
| Item Type: | Article |
|---|---|
| Source: | Copyright of this article belongs to Elsevier Science. |
| ID Code: | 121289 |
| Deposited On: | 14 Jul 2021 05:21 |
| Last Modified: | 14 Jul 2021 05:21 |
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