Mahapatra, S. ; Kumar, P. B. ; Alam, M. A. (2003) A new observation of enhanced Bias Temperature Instability in thin gate oxide p-MOSFETs In: 2003 IEEE International Electron Devices Meeting, IEDM '03 Technical Digest, 8-10 Dec, 2003, Washington, DC, USA.
Full text not available from this repository.
Official URL: http://ieeexplore.ieee.org/document/1269293/
Related URL: http://dx.doi.org/10.1109/IEDM.2003.1269293
Abstract
Bias Temperature Instability (BTI) and its underlying physical mechanism are studied for thin gate oxide MOSFETs. For p-MOSFETs stressed in inversion for a long-time, BTI increase is observed at high stress temperature. This is shown to be due to higher interface trap generation because of faster hydrogen diffusion in the gate poly. Enhanced BTI affects device lifetime and is strongly influenced by gate oxide scaling, as discussed.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| ID Code: | 112614 |
| Deposited On: | 12 Apr 2018 07:22 |
| Last Modified: | 12 Apr 2018 07:22 |
Repository Staff Only: item control page
