Mahapatra, S. ; Ahmed, K. ; Varghese, D. ; Islam, A. E. ; Gupta, G. ; Madhav, L. ; Saha, D. ; Alam, M. A. (2007) On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? In: 2007 45th Annual IEEE International Reliability Physics Symposium, 15-19 April, 2007, Phoenix, AZ, USA.
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Official URL: http://ieeexplore.ieee.org/document/4227601/
Related URL: http://dx.doi.org/10.1109/RELPHY.2007.369860
Abstract
Negative Bias Temperature Instability (NBTI) is studied in plasma (PNO) and thermal (TNO) Si-oxynitride devices having varying EOT. Threshold voltage shift (DeltaVT) and its field (EOX), temperature (T) and time (t) dependencies obtained from no-delay on-the-fly linear drain current (IDLIN) measurements are carefully compared to that obtained from Charge Pumping (CP). It is shown that thin and thick PNO and thin TNO devices show very similar NBTI behavior, which can primarily be attributed to generation of interface traps (DeltaNIT). Thicker TNO devices show different NBTI behavior and can be attributed to additional contribution from hole trapping (DeltaNh) in pre-existing bulk traps. A physics based model is developed to explain the experimental results.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Reaction-Diffusion Model; NBTI; Plasma and Thermal Nitridation; Interface Traps; Hole Trapping |
| ID Code: | 112605 |
| Deposited On: | 12 Apr 2018 08:05 |
| Last Modified: | 12 Apr 2018 08:05 |
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