Mahapatra, S. ; Islam, A. E. ; Deora, S. ; Maheta, V. D. ; Joshi, K. ; Jain, A. ; Alam, M. A. (2011) A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery In: 2011 IEEE International Conference on Reliability Physics Symposium (IRPS), 10-14 April, 2011, Monterey, CA, USA.
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Official URL: https://ieeexplore.ieee.org/document/5784544/
Related URL: http://dx.doi.org/10.1109/IRPS.2011.5784544
Abstract
Reaction-Diffusion (R-D) framework for interface trap generation along with hole trapping in pre-existing and generated bulk oxide traps are used to model Negative Bias Temperature Instability (NBTI) in differently processed SiON p-MOSFETs. Time, temperature and bias dependent degradation and recovery transients are predicted. Long-time power law exponent of DC degradation and uniquely renormalized duty cycle and frequency dependent AC degradation data from a wide range of sources are shown to have universal features and a broad consensus across industry/academia. These universal features can also be predicted using the classical R-D framework.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Source: | Copyright of this article belongs to Institute of Electrical and Electronics Engineers. |
| Keywords: | Sion P-Mosfets; NBTI; Interface Traps; Hole Trapping; Bulk Traps; R-D Model |
| ID Code: | 112595 |
| Deposited On: | 11 Apr 2018 11:51 |
| Last Modified: | 11 Apr 2018 11:51 |
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